Structure and method for FinFET integrated with capacitor

ABSTRACT

The present disclosure provides one embodiment of a semiconductor structure that includes a semiconductor substrate having a first region and a second region; a shallow trench isolation (STI) feature formed in the semiconductor substrate. The STI feature includes a first portion disposed in the first region and having a first thickness T 1  and a second portion disposed in the second region and having a second thickness T 2  greater than the first depth, the first portion of the STI feature being recessed from the second portion of the STI feature. The semiconductor structure also includes a plurality of fin active regions on the semiconductor substrate; and a plurality of conductive features disposed on the fin active regions and the STI feature, wherein one of the conductive features covers the first portion of the STI feature in the first region.

BACKGROUND

Integrated circuits have progressed to advanced technologies with highpacking densities and smaller feature sizes, such as 45 nm, 32 nm, 28 nmand 20 nm. In these advanced technologies, three dimensional transistorseach having a multi-fin structure are often desired for enhanced deviceperformance. However, existing methods and structures for suchstructures have various concerns and disadvantages associated withdevice quality and reliability. For example, various defects or residescan be introduced during the polysilicon etch. In another example, acapacitor structure is not easily integrated with a fin transistor whilestill maintaining a capability of tuning its capacitance in anacceptable range. Furthermore, the fabrication cost is higher due toadditional process steps, such as the need for an additional mask todefine one or more features of the capacitor. Therefore, there is a needof a structure and a method making the structure having a fin transistorand a capacitor integrated to address the above concerns.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a top view of a semiconductor structure having a fin activeregion and recessed isolation feature constructed according to aspectsof the present disclosure in one or more embodiments.

FIGS. 2-5 are sectional views of the semiconductor structure of FIG. 1constructed according to aspects of the present disclosure in one ormore embodiments.

FIG. 6 is a fragmentary perspective view of the semiconductor structureof FIG. 1 constructed according to aspects of the present disclosure inone or more embodiments.

FIG. 7 is a sectional view of the semiconductor structure of FIG. 6constructed according to aspects of the present disclosure in oneembodiment.

FIG. 8 is a top view of a semiconductor structure constructed accordingto aspects of the present disclosure in another embodiment.

FIGS. 9 and 10 are sectional views of a semiconductor structureconstructed according to aspects of the present disclosure in one ormore other embodiments.

FIG. 11 is a flowchart of a method making a semiconductor structure ofFIG. 1 constructed according to various aspects of the presentdisclosure in one embodiment.

FIGS. 12-21 are sectional views of a semiconductor structure at variousfabrication stages constructed according to the method of FIG. 11.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof various embodiments. Specific examples of components and arrangementsare described below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a first feature over or on a second featurein the description that follows may include embodiments in which thefirst and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formedinterposing the first and second features, such that the first andsecond features may not be in direct contact.

FIG. 1 is a top view of a semiconductor structure 100 having a finactive region and recessed isolation feature. FIGS. 2-5 are sectionalviews of the semiconductor structure 100. Specifically, FIG. 2 is asectional view taken from a sectional line AA′, FIG. 3 is a sectionalview taken from a sectional line BB′, FIG. 4 is a sectional view takenfrom a sectional line CC′, and FIG. 5 is a sectional view taken from asectional line DD′. The semiconductor structure 100 is described withreference to FIGS. 1 through 5.

The semiconductor structure 100 includes a substrate 102. The substrate102 includes silicon. Alternatively, the substrate 102 includesgermanium, silicon germanium or other proper semiconductor materials.The substrate 102 also includes various doped regions. In oneembodiment, the substrate 102 includes an epitaxy (or epi) semiconductorlayer. In another embodiment, the substrate 102 includes a burieddielectric material layer for isolation formed by a proper technology,such as a technology referred to as separation by implanted oxygen(SIMOX).

The semiconductor substrate 100 includes one or more fin-like activeregions (fin active regions) 104 formed on the substrate 102. The finactive regions 104 are active regions of one ore semiconductor materialsand are extruded above the top surface of the substrate 102. Thus, thefin active regions 104 are three dimensional active regions havingmultiple surfaces exposed and providing an efficient way tocapacitive-couple a gate electrode to the respective channel in a fieldeffect transistor (FET).

The fin active regions 104 include silicon or other suitablesemiconductor material, such as silicon germanium. The fin activeregions 104 includes a semiconductor material same to the semiconductormaterial of the substrate 102. In an alternative embodiment, the finactive regions 104 includes a semiconductor material different from thesemiconductor material of the substrate 102, formed by a suitabletechnique such as epitaxy growth. For example, the substrate 102includes silicon and the fin active regions include silicon germanium,silicon carbide or both in a proper configuration.

The semiconductor substrate 100 includes shallow trench isolation (STI)feature 106 formed in the substrate to separate various active regions.The STI feature 106 includes one or more dielectric material, such assilicon oxide, silicon nitride, silicon oxynitride, other suitabledielectric material, or combinations. The formation of the STI featuresmay include etching a trench in a substrate and filling the trench bydielectric materials. The filled trench may have a multi-layer structuresuch as a thermal oxide liner layer with silicon nitride filling thetrench. In one embodiment, the STI structure may be created using aprocess sequence such as: growing a pad oxide, forming a low pressurechemical vapor deposition (LPCVD) nitride layer, patterning an STIopening using photoresist and masking, etching a trench in thesubstrate, optionally growing a thermal oxide trench liner to improvethe trench interface, filling the trench with oxide, using chemicalmechanical planarization (CMP) to etch back, and using nitride etch toremove the nitride layer.

The semiconductor structure 100 includes a first region 108 and a secondregion 110 adjacent the first region. As illustrated in FIG. 1, thefirst region 108 is the area defined by a dashed line. The second region110 includes the rest areas in FIG. 1. In the present embodiment, thefirst region 108 is surrounded by the second region 110.

Particularly, the STI features 106 in the first region 108 (alsoreferred to as a first portion of the STI feature) are recessed from theSTI features 106 in the second region 110 (also referred to as a secondportion of the STI feature). As illustrated in FIG. 2, the STI features106 in the first region 108 has a first thickness T1 and the STIfeatures 106 in the second region 110 has a second thickness T2. Thesecond thickness T2 is greater than the first thickness T1. Furthermore,the top surface of the first portion of the STI feature is below the topsurface of the second portion of the STI feature by a distance of(T2-T1).

The semiconductor structure 100 includes one or more dielectric features112 and conductive features 114. The dielectric features 112 aredisposed on the fin active region 104 and the STI feature 106. Theconductive features 114 are disposed on the dielectric feature 112. Oneof the conductive features 114 is configured to cover the first region108 and cover the fin active regions 104 in the first region 108.

In one embodiment illustrated in FIG. 1, the fin active regions 104 areoriented in a first direction (“X” direction) while the conductivefeature 114 are oriented in a second direction (“Y” direction). The twodirections are perpendicular from each other.

As illustrated in FIG. 1, the semiconductor structure 100 includes afirst conductive feature 114 disposed in the first region 108. Thesemiconductor structure 100 includes a second and third conductivefeatures 114 disposed in the second region 110. The first conductivefeature in the first region 108 has a first width W1 and the second (orthird) conductive feature in the second region 110 has a first width W2different from the first width W1. Particularly, W1 is greater than W2.Accordingly, a first, second and third dielectric features are referredto those underlying the first, second and third conductive features,respectively.

The first conductive feature 114 is designed to cover the first region108. In this example illustrated in FIG. 1, the first region has adimension D along the first direction. W1 is greater than D for the fullcoverage. Furthermore, the first conductive feature 114 is extended tothe second region 110 in the first direction (X direction) by adimension S1 and is extended to the second region 110 in the seconddirection (Y direction) by a dimension S2 such that the first region 108is covered by the first conductive feature.

The dielectric feature 112 are aligned with the conductive feature 114and separate the conductive features 114 from the fin active regions104. In one example, the dielectric feature 112 and the conductivefeature 114 are formed by a procedure that includes depositing adielectric layer on the substrate 102, depositing a conductive layer onthe dielectric layer, and patterning the dielectric layer and theconductive layer to form various dielectric features 112 and conductivefeatures 114 using a lithography process and etch.

In one embodiment, the first conductive features, the first dielectricfeature and portion(s) of the fin active regions are configured andcoupled to form a capacitor, such as a decouple capacitor, in the firstregion 108. The second conductive features, the second dielectricfeature and other portion(s) of the fin active regions are configuredand coupled to form a fin field effect transistor (FinFET).

In the capacitor, the first conductive features, the first dielectricfeature and portion(s) of the fin active regions function as a firstelectrode, capacitor dielectric and a second electrode, respectively. Inthe field effect transistor, the second conductive features and thesecond dielectric feature function as gate electrode and gatedielectric, collectively as gate stack. Source and drain features areformed on the other portion(s) of the fin active regions and areinterposed by the gate stack.

Since the capacitor is formed in a fin active region, it is compatiblewith the transistor in term of fabrication. Additionally, the capacitoris formed in the recessed portion of the STI feature, the capacitor areais further increased without increasing the corresponding substrate areaoccupied by the capacitor. Furthermore, as the width W1 of the firstconductive feature is greater than the width of the second conductivefeature, the capacitor area is even increased further for more greaterrange to tune the capacitance.

In one embodiment, the first dielectric feature as the capacitordielectric includes a first dielectric material and the seconddielectric feature as the gate dielectric includes a second dielectricmaterial. The first and second dielectric materials are same oralternatively different from each other. For example, the gatedielectric may use one of silicon oxide, high k dielectric material andcombination tuned for the transistor performance. The capacitordielectric may use another one of silicon oxide, high k dielectricmaterial, and low k dielectric material tuned for proper capacitance.

In another embodiment, the first dielectric feature as the capacitordielectric includes a first thickness and the second dielectric featureas the gate dielectric includes a second thickness. The first and seconddielectric thicknesses are same or alternatively different to be tunedfor respective device performance.

In the case where the gate dielectric and capacitor dielectric havedifferent compositions, different thicknesses, or both, they are formedseparately. In the case where the gate dielectric and capacitordielectric have a same composition and a same thickness, they are formedsimultaneously by a same procedure.

In an alternative embodiment, the first conductive features, the firstdielectric feature and portion(s) of the fin active regions areconfigured and coupled to form a first FinFET in the first region 108.In this case, the first conductive feature and the first dielectricfeature function as gate electrode and gate dielectric, respectively,collectively referred to as a first gate stack. The second conductivefeatures, the second dielectric feature and other portion(s) of the finactive regions are configured and coupled to form a second FinFET. Thegate stack of the second FinFET is also referred to as a second gatestack.

In one embodiment, the first dielectric feature as gate dielectric forthe first FinFET includes a first dielectric material and the seconddielectric feature as the gate dielectric for the second FinFET includesa second dielectric material. The first and second dielectric materialsare same or alternatively different from each other.

In another embodiment, the first dielectric feature includes a firstthickness and the second dielectric feature includes a second thickness.The first and second dielectric thicknesses are same or alternativelydifferent to be tuned for respective device performance.

In the case where the gate dielectric and capacitor dielectric have asame composition and a same thickness, they are formed simultaneously bya same procedure. In the case where the first dielectric feature and thesecond dielectric feature have different compositions, differentthicknesses, or both, they are formed separately. Further, first andsecond FinFET may be configured for different function. In one example,the first FinFET is configured as an I/O device and the second FinFET isconfigured as a core device. In furtherance of the example, the firstdielectric feature is thicker than the second dielectric feature.

FIG. 6 is a fragmentary perspective view of the semiconductor structure100 constructed according to aspects of the present disclosure in oneembodiment. FIG. 7 is a sectional view of the semiconductor structure100 of FIG. 6 along the dashed line EE′. It is 106 in the first region108 is recessed and the corresponding fin active regions 104 in thefirst region 108 are extended deep into the recess. Particularly, theconductive feature 114 covers the recess in the first region 108 andextends to the second region to ensure the full coverage.

FIG. 8 is a top view of a semiconductor structure 130 constructedaccording to aspects of the present disclosure in another embodiment.The semiconductor structure 130 includes a plurality of cells 100configured in an array. Each cell 100 includes a semiconductor structure100 of FIG. 1. In the present example for illustration, thesemiconductor structure 130 includes 3 columns and 3 rows, forming 3×3array of cells 100. According to one embodiment, a capacitor is formedin the recessed first region 108 of the semiconductor structure 100. Inthis embodiment, the conductive features as the first electrodes areconnected to a first power line 132 with a first electric voltage, suchas a high voltage. The fin active regions as the second electrodes areconnected to a second power line 134 with a second electric voltage,such as a low voltage. By different routing, the capacitors inrespective cells may be connected in series, in parallel or a hybridconnection.

FIGS. 9 and 10 are sectional views of semiconductor structures 140 and146 constructed according to various embodiments. The semiconductorstructure 140 of FIG. 9 is similar to the semiconductor structure 100 ofFIG. 1 and the corresponding sectional view in FIG. 2. For example, thesemiconductor structure 140 includes in active regions 104 and the STIfeature 106 formed on the substrate 102. The substrate 102 includes afirst region 108 and a second region 110. The STI feature in the firstregion 108 is recessed from the STI feature in the second region 110. Adielectric feature 142 is formed on the substrate 102 and a conductivefeature 114 is formed on the dielectric feature 142. The conductivefeature 114 covers the first region 108, especially covering therecessed STI features within the gaps between the fin active regions.

In the semiconductor structure 140 of FIG. 9, the conductive features114, the dielectric feature 142 and the fin active regions 104 areconfigured and coupled to form a FinFET (referred to as FinFET 140). Inthis case, the conductive feature 114 and the dielectric feature 142function as gate electrode and gate dielectric, respectively.

The semiconductor structure 146 of FIG. 10 is similar to thesemiconductor structure 100 of FIG. 1 and the corresponding sectionalview in FIG. 2 as well. For example, the semiconductor structure 146includes in active regions 104 and the STI feature 106 formed on thesubstrate 102. The substrate 102 includes a first region 108 and asecond region 110. The STI feature in the first region 108 is recessedfrom the STI feature in the second region 110. A dielectric feature 148is formed on the substrate 102 and a conductive feature 114 is formed onthe dielectric feature 148. The conductive feature 114 covers the firstregion 108.

In the semiconductor structure 146 of FIG. 10, the conductive features114, the dielectric feature 142 and the fin active regions 104 areconfigured and coupled to form another FinFET (referred to as FinFET146). In this case, the conductive feature 114 and the dielectricfeature 148 function as gate electrode and gate dielectric,respectively.

In the present embodiment, an integrated circuit includes both theFinFET 140 and the FinFET 146 formed in the same substrate 102. However,the dielectric feature 142 as the gate dielectric for the FinFET 140includes a first thickness and the dielectric feature 148 as the gatedielectric for the FinFET 146 includes a second thickness greater thanthe first thickness. In one example, the FinFET 146 is configured as anI/O device and the FinFET 140 is configured as a core device.

FIG. 11 is a flowchart of a method 200 for making a semiconductor deviceconstructed according to an embodiment of the present invention. Thesemiconductor device includes a multi-fin structure and a dual depthisolation structure. FIGS. 12 through 21 are sectional views of anembodiment of a semiconductor structure 300 at various fabricationstages. The semiconductor structure 300 and the method 200 of making thesame are collectively described with reference to FIGS. 12 through 21.The semiconductor structure 300 is provided for illustration of themethod 200 and is similar to the semiconductor 100 of FIG. 1. Therefore,the similar features are described concisely for simplicity.

Referring to FIGS. 11 and 12, the method 200 begins at step 202 byproviding a semiconductor substrate 102. The semiconductor substrate 102includes silicon. Alternatively, the substrate 102 includes germanium,silicon germanium or other proper semiconductor materials.

Still referring to FIGS. 11 and 12, the method 200 proceeds to step 204by forming a mask layer 301. The mask layer 301 is a hard mask layerhaving one or more suitable dielectric materials. In the presentembodiment, the mask layer 301 includes a silicon oxide (SiO) layer 302formed on the substrate 102 and a silicon nitride (SiN) layer 304 formedon the silicon oxide layer 302. In one example, the SiO layer 214includes a thickness ranging between about 5 nm and about 15 nm. Inanother example, the SiN layer 216 includes a thickness ranging betweenabout 40 nm and about 120 nm. In another embodiment, step 204 includesforming the SiO layer 302 by thermal oxidation and forming the SiN layer304 by chemical vapor deposition (CVD). For example, the SiN layer 304is formed by CVD using chemicals including Hexachlorodisilane (HCD orSi2Cl6), Dichlorosilane (DCS or SiH2Cl2), Bis(TertiaryButylAmino) Silane(BTBAS or C8H22N2Si) and Disilane (DS or Si2H6).

The method 200 proceeds to step 206 by patterning the mask layer 301 bya procedure including a lithography patterning process and an etchingprocess. In the present embodiment as illustrated in FIG. 12, apatterned photoresist layer 306 is formed on the hard mask layer 301using a photolithography process including photoresist coating, softbaking, exposing, post-exposure baking (PEB), developing, and hardbaking.

Referring to FIG. 13, the mask layer 301 is etched through the openingsof the patterned photoresist layer 306, forming a patterned mask layer301, by the etching process. The patterned photoresist layer is removedthereafter using a suitable process, such as wet stripping or plasmaashing. In one example, the etching process includes applying a dry (orplasma) etch to remove the mask layer 301 within the openings of thepatterned photoresist layer 306. In another example, the etching processincludes applying a plasma etch to remove the SiN layer 304 within theopenings of the patterned photoresist layer 306, and a wet etch with ahydrofluoric acid (HF) solution to remove the SiO layer 302 within theopenings. In another example, the etching process includes applying aplasma etch to remove the SiN layer 304 within the openings but the SiOlayer 302 may remain at this processing stage. Thereafter, the patternedphotoresist layer 306 is removed by a proper technique, such asstripping or ashing.

The patterned mask layer 301 includes multiple openings defining finactive regions 104. The fin active regions 104 is configured for variousdevices, such as a FinFET, a capacitor or both. In the presentembodiment, the semiconductor structure 300 includes a first region 108and a second region 110. In a particular example, a capacitor is formedin the first region 108 and a FinFET is formed in the second region 110.In one example, the FinFET includes a metal-oxide-semiconductor(MOSFET).

Still referring to FIG. 13, the method 200 proceeds to step 208 byperforming an etch process to the substrate 102 through the openings ofthe hard mask 301, forming various trenches 307 in the substrate 102.Various fin active regions 104 are defined by the etch process. In oneembodiment, the etch process implements a dry etch. For example, theetchant of the etch process includes plasma HBr, Cl2, SF6, O2, Ar, andHe. In another example, the etchant includes plasma CF4, C3F8, C4F8,CHF3, CH2F2, or a combination thereof.

Referring to FIGS. 11 and 14, the method 200 proceeds 210 by forming oneor more STI features 308 in the trenches 307. The STI features 308include one or more dielectric materials filled in the trenches 307. Inone embodiment, the formation of the STI features 308 includesdielectric deposition and polishing. In a particular example, theformation of the STI features 308 includes filling the trenches by oneor more dielectric materials such as silicon oxide, silicon nitride, orsilicon oxynitride. The filled trench may have a multi-layer structuresuch as a thermal oxide liner layer with silicon nitride filling thetrench. In one embodiment, filling various STI features includes growinga thermal oxide trench liner to improve the trench interface, fillingthe trench with silicon oxide or silicon nitride using a CVD technology,and optionally performing an thermal annealing. In one example, thedielectric deposition uses high density plasma CVD (HDPCVD). In anotherexample, the polishing may use a chemical mechanical polishing (CMP)process to remove the excessive dielectric materials on the hard maskand planarize the top surface of the semiconductor structure 300.

Referring to FIGS. 11 and 15, the method 200 proceeds to step 212 byforming another patterned photoresist layer 310 on the substrate 102using a lithography process. The patterned photoreisst layer 310 definesa recessed region. Particularly, the patterned photoresist layer 310 ispatterned to cover the second region 110 and has an opening to exposethe first region 108 that is the area to be recessed.

Referring to FIGS. 11 and 16, the method 200 proceeds to step 214 byperforming an etch process to the STI features 308 using the patternedphotoresist layer 310 as an etch mask. The etch process uses an etchantto selectively etch the STI features 308. Thus, the STI features 308 inthe first region 108 are etched back and recessed form the STI features308 in the second region 110. Thereafter, the patterned photoresistlayer 310 is removed.

Referring to FIGS. 11 and 17, the method 200 proceeds to step 216 byremoving the hard mask 301 by an etch process. In the presentembodiment, hard mask 301 is partially removed. Particularly, the SiNlayer 304 is removed. The etch process to remove the SiN layer 304 usesan etchant to selectively remove the silicon nitride without etchsilicon oxide. In one example, the etchant in this etch process includesa hot phosphoric acid (H3PO4) solution.

Referring to FIGS. 11 and 18, the method 200 may proceed to step 218 byperforming an ion implantation process 312 to the substrate 102, formingvarious well regions, such as n-wells or p-wells. In the presentexample, the silicon oxide layer 302 is used as an implantation screenlayer for improved implant effect, such as with reduced implantationchanneling issue. The implantation process 312 uses proper implantingspecies and suitable dose. For example, The implanting species mayinclude phosphorous for n-wells or boron for p-wells.

Referring to FIGS. 11 and 19, the method 200 may proceed to step 220 byanother etch process to the STI features 308 to etch back the STIfeatures 308 in both the first region 108 and the second region 110. Thefin active regions 104 are formed and extruded out from the STI features308. After step 220, the STI features in the first region 108 are stillrecessed relatively to the STI features in the second region 110. Theetchant used in this step may be similar to the etchant used in the etchprocess at step 214.

Referring to FIGS. 11 and 20, the method 200 may proceed to step 222 byforming a dielectric layer 112 on the fin active regions 104. Thedielectric layer 112 is formed on top surfaces and sidewalls of the finactive regions 104. The dielectric layer 112 may include silicon oxide,high k dielectric material or combinations thereof. The dielectric layer112 may be formed by a suitable technique, such as thermal oxidation,atomic layer deposition (ALD), metal organic chemical vapor deposition(MOCVD), physical vapor deposition (PVD), or molecular beam epitaxy(MBE). In one example, the dielectric layer 112 includes silicon oxideformed by thermal oxidation applied to the fin active regions 104 thatinclude silicon. In another example, the high k dielectric material isused and includes metal oxide, such as zirconium oxide (ZrO2), aluminumoxide (Al2O3), or hafnium oxide (HfO2). In yet another example, the highk dielectric material is formed by an UV-Ozone Oxidation that includessputtering to form metal film; and in-situ oxidation of metal film by O2in presence of ultra-violet (UV) light. In yet another example, thedielectric layer 112 includes a silicon oxide film and a high kdielectric film. When dual dielectric thickness or dual dielectricmaterial is used, the dielectric features with different compositionan/or different thickness are formed separately.

Referring to FIGS. 11 and 21, the method 200 may proceed to step 224 byforming a conductive layer 114 on the dielectric layer 112. Theconductive layer 114 includes polysilicon, metal (such as aluminum,copper or tungsten), silicide, other conductive material with properwork functions (for n-type FET and p-type FET, respectively), or acombinations thereof. The conductive layer 114 is formed by a suitabletechnique, such as PVD.

Still referring to FIGS. 11 and 21, the method 200 may proceed to step226 by patterning the conductive layer 114 and the dielectric layer 112to form conductive features and dielectric features, respectively. Thepatterning of the conductive layer 114 and the dielectric layer 112includes one or more etch steps. In one example, a hard mask is formedon the conductive layer 114 as an etch mask during the etch process. Inanother example, a patterned photoresist layer is used as an etch maskto pattern the conductive layer 114 and the dielectric layer 112.

Particularly, the conductive layer 114 is patterned such that one of theconductive features (and the corresponding dielectric feature as well)covers the recessed first region 108. In the present example, the one ofthe conductive feature in the first region 108 is extended to the secondregion 110. Since the fin active regions 104 in the recessed firstregion 108 has a high aspect ratio and is hard to complete the etch ofthe conductive layer within the gaps of the fin active regions 104, thefully coverage of the recessed first region by the conductive layer 114avoids the direct etching of the conductive layer in the recessed firstregion 108.

Other process steps may be implemented before, during or after themethod 200. In one embodiment, another procedure to form source anddrain regions may be implemented to form one or more FinFETs. In oneexample, the source and drain regions include light doped drain (LDD)regions and heavily doped source and drain (S/D) features, collectivelyreferred to as source and drain regions, formed by various ionimplantation processes. When the semiconductor structure 300 includesboth n-type FETs (nFETs) and p-type FETs (pFETs), the source and drainregions are formed for the n-type FETs and the p-type FETs,respectively, using proper doping species. As one example for nFETs, theLDD features are formed by an ion implantation with a light doping dose.Thereafter, spacers are formed by dielectric deposition and anisotropicetch, such as plasma etch. Then the heavily doped S/D features areformed by an ion implantation with a heavy doping dose. The varioussource and drain features of the pFETs can be formed in a similarprocedure but with opposite doping type. In one embodiment of theprocedure to form various source and drain features for both nFETs andpFETs, the LDD features of nFETs are formed by an ion implantation whilethe regions of pFETs are covered by a patterned photoresist layer; theLDD features of pFETs are formed by an ion implantation while theregions of nFETs; then spacers are formed to nFET gate stacks and pFETgate stacks by deposition and etch. the S/D features of nFETs are formedby ion implantation while the regions of pFETs are covered by anotherpatterned photoresist layer; and the S/D features of pFETs are formed byion implantation while the regions of nFETs are covered by anotherpatterned photoresist layer. In one embodiment, a high temperatureannealing process is followed to activate the various doping species inthe source and drain regions.

In another embodiment, an inter-level dielectric (ILD) layer is formedon the semiconductor substrate 102. The ILD layer includes siliconoxide, low k dielectric material, other suitable dielectric materials,or combinations thereof. The ILD layer is formed by a suitabletechnique, such as CVD. For example, a high density plasma CVD can beimplemented to form the ILD layer.

In yet another embodiments, various interconnection features are formedto couple various devices to form functional circuits. Theinterconnection features include vertical interconnects, such ascontacts and vias, and horizontal interconnects, such as metal lines.The various interconnection features may use various conductivematerials including copper, tungsten and silicide. In one example, adamascene process is used to form copper-based multilayerinterconnection structure. In another embodiment, tungsten is used toform tungsten plug in the contact holes. In another example, silicide isused to form various contact on source and drain regions for reducedcontact resistance.

In yet another embodiment, a pFET has a strained structure for enhancedcarrier mobility and improved device performance. In furtherance of theembodiment, silicon germanium (SiGe) is formed in the source and drainregions of the pFET to achieve a proper stress effect. In anotherembodiment, an nFET has a strained structure for enhanced carriermobility and improved device performance. In furtherance of theembodiment, silicon carbide (SiC) is formed in the source and drainregions of the nFET to achieve a proper stress effect.

Although various embodiments of the semiconductor structure and themethod making the same are provided. Other alternatives and additionsmay present without departure from the scope of the present disclosure.The present disclosure may be used in various applications. For example,the semiconductor structure 100 with a FinFET and a capacitor may beused to form static random access memory (SRAM) cells. In otherexamples, the semiconductor structure 100 may be incorporated in variousintegrated circuit, such as logic circuit, dynamic random access memory(DRAM), flash memory, or imaging sensor.

Thus, the present disclosure provides one embodiment of a semiconductorstructure that includes a semiconductor substrate having a first regionand a second region; a shallow trench isolation (STI) feature formed inthe semiconductor substrate. The STI feature includes a first portiondisposed in the first region and having a first thickness T1 and asecond portion disposed in the second region and having a secondthickness T2 greater than the first depth, the first portion of the STIfeature being recessed from the second portion of the STI feature. Thesemiconductor structure also includes a plurality of fin active regionson the semiconductor substrate; and a plurality of conductive featuresdisposed on the fin active regions and the STI feature, wherein one ofthe conductive features covers the first portion of the STI feature inthe first region.

In one embodiment of the semiconductor structure, the first portion ofthe STI feature is recessed from the second portion of the STI featuresuch that a top surface of the first portion is lower than a top surfaceof the second portion by (T2-T1).

In another embodiment, the semiconductor structure further includes aplurality of dielectric features underlying the conductive features andseparating the conductive feature from the fin active regions.

In yet another embodiment, the semiconductor structure further includesa capacitor disposed in the first region; and a transistor disposed inthe second region. The capacitor includes one of the fin active regions,the one of the conductive features, and one of the dielectric layerseparating the one of the conductive features from the one of theconductive features. In one example, the capacitor is a de-couplingcapacitor and the transistor is a field effect transistor.

In yet another embodiment, the semiconductor structure further includesa first transistor disposed in the first region, wherein the firsttransistor includes a first gate stack having a first one of thedielectric features and a first one of the conductive features overlyingthe first one of the dielectric features; and a second transistordisposed in the second region, wherein the second transistor includes asecond gate stack having a second one of the dielectric features and asecond one of the conductive features overlying the second one of thedielectric features. The first one of the dielectric features has afirst thickness, and the second one of the dielectric features has asecond thickness different from the first thickness.

In yet another embodiment, the plurality of conductive features includea first conductive feature disposed in the first region and having afirst width; and a second conductive feature disposed in the secondregion and having a second width less than the first width.

In yet another embodiment, the plurality of dielectric features includea first dielectric feature disposed in the first region, underlying thefirst conductive feature, and having a first dielectric material; and asecond dielectric feature disposed in the second region, underlying thesecond conductive feature, and having a second dielectric materialdifferent from the first dielectric material.

In yet another embodiment, the first conductive feature, the firstdielectric feature and a first subset of the fin active regions areconfigured to form a capacitor; and the second conductive feature, thesecond dielectric feature and a second subset of the fin active regionsare configured to form a fin field effect transistor (FinFET).

The present disclosure also provides another embodiment of asemiconductor structure that includes a semiconductor substrate having afirst region and a second region; a fin active region formed on thesemiconductor substrate and extended in the first and second regions; ashallow trench isolation (STI) feature formed in the semiconductorsubstrate and adjacent the fin active region. The STI feature includes afirst portion disposed in the first region and a second portion disposedin the second region, and the first portion of the STI feature has afirst top surface and the second portion of the STI feature has a secondtop surface higher than the first top surface. The semiconductorstructure also includes a first conductive feature formed on the finactive region and the STI feature, wherein the first conductive featureis disposed in the first region and covers the first portion of the STIfeature; and a second conductive feature formed on the fin active regionand the STI feature, wherein the second conductive feature is disposedin the second region.

In one embodiment, the semiconductor structure further includes a firstdielectric feature aligned with the first conductive feature andunderlying the first conductive feature; and a second dielectric featurealigned with the second conductive feature and underlying the secondconductive feature.

In another embodiment, the fin active region, the first dielectricfeature and the first conductive feature are configured and coupled toform a capacitor; and the fin active region, the second dielectricfeature and the second conductive feature are configured and coupled toform a field effect transistor.

In yet another embodiment, the first conductive feature includes a firstwidth; and a second conductive feature includes a second width less thanthe first width.

In yet another embodiment, the first dielectric feature include a firstthickness; and the second dielectric feature include a second thicknessdifferent from the first thickness.

In yet another embodiment, the first dielectric feature include a firstdielectric material; and the second dielectric feature include a seconddielectric material different from the first dielectric material.

In yet another embodiment, the fin active region is oriented in a firstdirection; and the first and second conductive features are oriented ina second direction perpendicular to the first direction.

The present disclosure also provides one embodiment of a method thatincludes etching a semiconductor substrate to form a plurality trenchesand define a plurality of fin active regions; filling in the pluralityof trenches with a dielectric material to form shallow trench isolation(STI) features; recessing a first subset of the STI features in a firstregion by a first dimension; recessing a second subset of the STIfeatures in a second region by a second dimension less than the firstdimension; and forming a conductive feature on the STI features and thefin active regions, wherein the conductive features covers the firstsubset of the STI features.

In one embodiment, the recessing a first subset of the STI features in afirst region by a first dimension; and the recessing a second subset ofthe STI features in a second region include: forming a patterned resistlayer on the semiconductor substrate, wherein the patterned resist layerhas openings exposing the first region and covers the second region;performing a first STI etch to the first subset of the STI features inthe first region through openings of the patterned resist layer;removing the patterned resist layer; and performing a second STI etch tothe first subset of the STI features in the first region and the secondsubset of the STI features in the second region, resulting in the firstsubset of the STI features is recessed from the second subset of the STIfeatures.

In another embodiment, the method further includes performing a wellimplantation to the semiconductor substrate after the performing a firstSTI etch and before the performing a second STI etch.

In another embodiment, the method further includes depositing a hardmask layer on the semiconductor substrate; patterning the hard masklayer using a lithography process, wherein the etching a semiconductorsubstrate to form a plurality trenches and define a plurality of finactive regions includes etching the semiconductor substrate throughopenings of the hard mask layer; and removing the hard mask layer afterthe first STI etch and before the performing a well implantation.

The foregoing has outlined features of several embodiments. Thoseskilled in the art should appreciate that they may readily use thepresent disclosure as a basis for designing or modifying other processesand structures for carrying out the same purposes and/or achieving thesame advantages of the embodiments introduced herein. Those skilled inthe art should also realize that such equivalent constructions do notdepart from the spirit and scope of the present disclosure, and thatthey may make various changes, substitutions and alterations hereinwithout departing from the spirit and scope of the present disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: asemiconductor substrate having a first region and a second region; ashallow trench isolation (STI) feature formed in the semiconductorsubstrate, wherein the STI feature includes a first portion disposed inthe first region and having a first thickness T1 and a second portiondisposed in the second region and having a second thickness T2 greaterthan the first thickness T1, the first portion of the STI feature beingrecessed from the second portion of the STI feature; a plurality of finactive regions on the semiconductor substrate; a plurality of conductivefeatures disposed on the fin active regions and the STI feature, whereinone of the conductive features covers the first portion of the STIfeature in the first region and a portion of the second portion of theSTI feature in the second region; a plurality of dielectric featuresunderlying the conductive features and separating the conductive featurefrom the fin active regions; a first transistor disposed in the firstregion, wherein the first transistor comprises a first gate stack havinga first one of the dielectric features and a first one of the conductivefeatures overlying the first one of the dielectric features; and asecond transistor disposed in the second region, wherein the secondtransistor comprises a second gate stack having a second one of thedielectric features and a second one of the conductive featuresoverlying the second one of the dielectric features, wherein the firstone of the dielectric features has a first dielectric thickness, and thesecond one of the dielectric features has a second dielectric thicknessdifferent from the first dielectric thickness.
 2. The semiconductorstructure of claim 1, wherein the first portion of the STI feature isrecessed from the second portion of the STI feature such that a topsurface of the first portion is lower than a top surface of the secondportion by (T2-T1).
 3. The semiconductor structure of claim 1, furthercomprising: a capacitor disposed in the first region, wherein thecapacitor includes one of the fin active regions, one of the conductivefeatures, and one of the dielectric layer separating the one of theconductive features from the one of the fin active regions; and atransistor disposed in the second region.
 4. The semiconductor structureof claim 3, wherein the capacitor is a de-coupling capacitor and thetransistor is a field effect transistor.
 5. The semiconductor structureof claim 1, wherein the plurality of conductive features include: afirst conductive feature disposed in the first region and having a firstwidth W1; and a second conductive feature disposed in the second regionand having a second width W2 less than the first width W1.
 6. Asemiconductor structure, comprising: a semiconductor substrate having afirst region and a second region; a single fin active region formed onthe semiconductor substrate that extends in the first and secondregions; a shallow trench isolation (STI) feature formed in thesemiconductor substrate and adjacent the fin active region, wherein theSTI feature includes: a first portion disposed in the first region and asecond portion disposed in the second region, and the first portion ofthe STI feature has a first top surface and the second portion of theSTI feature has a second top surface higher than the first top surface;a first conductive feature formed on the fin active region and the STIfeature, wherein the first conductive feature is disposed in the firstregion and covers the first portion of the STI feature, the firstconductive feature further comprising a first width; a second conductivefeature formed on the fin active region and the STI feature, wherein thesecond conductive feature is disposed in the second region, the secondconductive feature further comprising a second width less than the firstwidth; a first dielectric feature aligned with the first conductivefeature and underlying the first conductive feature, the firstdielectric feature comprising a first thickness; a second dielectricfeature aligned with the second conductive feature and underlying thesecond conductive feature, the second dielectric feature comprising asecond thickness different from the first thickness; wherein the finactive region, the first dielectric feature, and the first conductivefeature are configured and coupled to form a capacitor; and wherein thefin active region, the second dielectric feature, and the secondconductive feature are configured and coupled to form a field effecttransistor.
 7. The semiconductor structure of claim 6, wherein: the finactive region is oriented in a first direction; and the first and secondconductive features are oriented in a second direction perpendicular tothe first direction.
 8. The semiconductor structure of claim 1, wherein:each of the fin active regions extends along the first and secondportions of the STI feature in a first direction; and each of theconductive features are disposed along the fin active regions and theSTI features in a second direction perpendicular to the first direction.9. The semiconductor structure of claim 1, wherein: the first portion ofthe first region has a plurality of sides; and the second portion of thesecond region surrounds the first portion on each of the sides.
 10. Thesemiconductor structure of claim 9, wherein the conductive feature thatcovers the first and second portions of the STI feature extends outbeyond all sides of the first portion to thereby cover the portion ofthe second portion of the STI feature in the second region.
 11. Asemiconductor structure, comprising: a semiconductor substrate having afirst region and a second region; a shallow trench isolation (STI)feature formed in the semiconductor substrate, wherein the STI featurecomprises a first portion disposed in the first region and having afirst thickness T1 and a second portion disposed in the second regionand having a second thickness T2 greater than the first thickness T1,the first portion of the STI feature being recessed from the secondportion of the STI feature; a plurality of fin active regions on thesemiconductor substrate; a plurality of conductive features disposed onthe fin active regions and the STI feature, wherein one of theconductive features covers the first portion of the STI feature in thefirst region and a portion of the second portion of the STI feature inthe second region; wherein the plurality of conductive features furthercomprise: a first conductive feature disposed in the first region andhaving a first width W1; and a second conductive feature disposed in thesecond region and having a second width W2 less than the first width W1;and a plurality of dielectric features underlying the conductivefeatures and separating the conductive feature from the fin activeregions, wherein the plurality of dielectric features comprise: a firstdielectric feature disposed in the first region, underlying the firstconductive feature, and having a first dielectric material; and a seconddielectric feature disposed in the second region, underlying the secondconductive feature, and having a second dielectric material differentfrom the first dielectric material.
 12. The semiconductor structure ofclaim 11, wherein: the first conductive feature, the first dielectricfeature, and a first subset of the fin active regions are configured toform a capacitor; and the second conductive feature, the seconddielectric feature, and a second subset of the fin active regions areconfigured to form a fin field effect transistor (FinFET).
 13. Asemiconductor structure, comprising: a semiconductor substrate having afirst region and a second region; a single fin active region formed onthe semiconductor substrate that extends in the first and secondregions; a shallow trench isolation (STI) feature formed in thesemiconductor substrate and adjacent the fin active region, wherein theSTI feature comprises: a first portion disposed in the first region anda second portion disposed in the second region, and the first portion ofthe STI feature has a first top surface and the second portion of theSTI feature has a second top surface higher than the first top surface;a first conductive feature formed on the fin active region and the STIfeature, wherein the first conductive feature is disposed in the firstregion and covers the first portion of the STI feature, the firstconductive feature further comprising a first width; a second conductivefeature formed on the fin active region and the STI feature, wherein thesecond conductive feature is disposed in the second region, the secondconductive feature further comprising a second width less than the firstwidth; a first dielectric feature aligned with the first conductivefeature and underlying the first conductive feature, the firstdielectric feature further comprising a first dielectric material; asecond dielectric feature aligned with the second conductive feature andunderlying the second conductive feature, the second dielectric featurefurther comprising a second dielectric material different from the firstdielectric material; wherein the fin active region, the first dielectricfeature, and the first conductive feature are configured and coupled toform a capacitor; and wherein the fin active region, the seconddielectric feature, and the second conductive feature are configured andcoupled to form a field effect transistor.